DocumentCode
1037922
Title
Light Extraction Efficiency Enhancement of GaN Blue LED by Liquid-Phase-Deposited ZnO Rods
Author
Lee, Ming-Kwei ; Ho, Chen-Lin ; Chen, Po-Chun
Author_Institution
Nat. Sun Yat-sen Univ., Kaohsiung
Volume
20
Issue
4
fYear
2008
Firstpage
252
Lastpage
254
Abstract
We investigate the light extraction efficiency of a GaN light-emitting diode (LED) by using liquid-phase-deposited ZnO rods at near-room temperature. Zinc nitrate and hexamethylenetetramine were used as the deposition precursors. Compared with the conventional GaN LED, the optical power output of the GaN LED with crystalline ZnO rods on its surface has about 1.6 times enhancement.
Keywords
II-VI semiconductors; III-V semiconductors; gallium compounds; light emitting diodes; liquid phase deposition; wide band gap semiconductors; zinc compounds; GaN-ZnO; blue LED; hexamethylenete-tramine; light extraction efficiency enhancement; light-emitting diode; liquid-phase-deposited rods; optical power output; temperature 293 K to 298 K; zinc nitrate; Brightness; Crystallization; Gallium nitride; Light emitting diodes; Liquid crystal displays; Optical films; Optical refraction; Optical variables control; Temperature; Zinc oxide; GaN light-emitting diode (LED); ZnO; light extraction efficiency; liquid phase deposition (LPD);
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2007.913652
Filename
4432669
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