Title :
GaInAs junction FET fully dry etched by metal organic reactive ion etching technique
Author :
Lecrosnier, D. ; Henry, Leanne ; Le Corre, A. ; Vaudry, C.
Author_Institution :
CNET, Lannion, France
Abstract :
The metal organic reactive ion etching technique, which uses a mixture of methane, hydrogen and argon, has been applied for the first time to the fabrication of a device. This etching technique is used to define the gate of a GaInAs junction FET. Results shows that it permits good control of etching depth with low surface damage.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; junction gate field effect transistors; sputter etching; GaInAs junction FET; JFET; MORIE; control of etching depth; metal organic reactive ion etching; methane Ar-H2 etching gas mixture; surface damage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870871
