DocumentCode
1037967
Title
GaInAsP buried channel ea modulator for 13 μm fibre links
Author
Lin, S.C. ; Jing, X.L. ; Chin, M.K. ; Walpita, L.M. ; Yu, Paul K. L. ; Chang, William S. C.
Author_Institution
University of California at San Diego, Department of Electrical & Computer Engineering, La Jolla, USA
Volume
23
Issue
24
fYear
1987
Firstpage
1257
Lastpage
1261
Abstract
Double-heterostructure (DH) GaInAsP/InP buried channel waveguide electroabsorption (EA) modulators are demonstrated. They are designed for external intensity modulation of 1·3 μm laser light and direct coupling to single-mode fibre. For a 650 μm-long device, a 30 dB on/off ratio has been achieved at a bias voltage of - 9 V. The substrate light is found to be a limiting factor of the measured extinction ratio for short modulators, but not for long (1·8 mm) modulators.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; -9 V; 1.3 micron; 30 dB on/off ratio; 650 micron; GaInAsP waveguide modulators; bias voltage; direct coupling to single-mode fibre; double heterostructure; external intensity modulation; extinction ratio; fibre links; short modulators; substrate light;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870873
Filename
4259114
Link To Document