DocumentCode
1038016
Title
The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits
Author
Ettenberg, Morris ; Nadan, Joseph S.
Author_Institution
City College of the City University of New York, N.Y.
Volume
17
Issue
3
fYear
1970
fDate
3/1/1970 12:00:00 AM
Firstpage
219
Lastpage
223
Abstract
The interaction between slow electromagnetic waves and drifting carriers in a semiconductor is analyzed including mechanisms important and peculiar to the semiconductor device. The growth rate coefficients, excitation amplitudes, and phase are found using a modification of Pierce´s one-dimensional model of the traveling-wave tube. A technique for calculating a growing mode criterion is presented.
Keywords
Admittance; Ash; Charge carriers; Circuits; Cities and towns; Electron beams; Electron tubes; Equations; Radio frequency; Semiconductor optical amplifiers;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.16957
Filename
1476141
Link To Document