DocumentCode :
1038105
Title :
The technical evolution of random-access cryoelectric memory systems
Author :
Gange, R.
Author_Institution :
RCA Laboratories, Princeton, N.J.
Volume :
4
Issue :
3
fYear :
1968
fDate :
9/1/1968 12:00:00 AM
Firstpage :
325
Lastpage :
325
Keywords :
Superconducting memories; Anisotropic magnetoresistance; Capacitors; Inductors; Magnetic anisotropy; Perpendicular magnetic anisotropy; Reactive power; Reactive power control; Superconducting device noise; Superconducting magnets; Superconductivity;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1968.1066313
Filename :
1066313
Link To Document :
بازگشت