DocumentCode :
1038154
Title :
Resonance and parametric effects in IMPATT diodes
Author :
Harth, Wolfgaxg
Author_Institution :
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, West Germany
Volume :
17
Issue :
4
fYear :
1970
fDate :
4/1/1970 12:00:00 AM
Firstpage :
282
Lastpage :
289
Abstract :
The theory of nonlinear fundamental and subharmonic resonances in the avalanche region of IMPATT diodes is developed by use of the method of harmonic balance. Due to the high resonance strength of the subharmonic mode, and as a consequence of large-signal parametric interaction, the negative resistance of the diode is markedly increased at the presence of a self-pumped oscillation of twice the frequency of the fundamental mode, especially for low-transit angles across the drift region.
Keywords :
Avalanche breakdown; Carrier confinement; Current density; Diodes; Electric fields; Frequency conversion; Ionization; Oscillators; Resonance; Tuning;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.16971
Filename :
1476155
Link To Document :
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