Vacuum-deposited thin-film p-Se/n-CdSe heterojunction diodes

A preliminary feasibility study has been made of vacuum-deposited thin-film diodes based on the p-Se/n-CdSe heterojunction system. These diodes have excellent rectification properties, including: 1) 70-volt reverse breakdown, 2) 10⁵rectification ratio over a range of 25 volts, and 3) 0.5-volt forward offset voltage. The diodes have a "sandwich-cell" structure formed by depositing a CdSe layer onto a Crystallized layer of Se. This work is still in a preliminary stage. However, the results thus far suggest that these diodes may be suitable for use in thin-film integrated circuits for those specialized circuit applications which require only diodes, resistors, and/or capacitors.