• DocumentCode
    1038215
  • Title

    OMCVD-grown InP/GaInAs heterojunction bipolar transistors

  • Author

    Hayes, J.R. ; Bhat, R. ; Schumacher, H. ; Koza, M.

  • Author_Institution
    Bell Communications Research Inc., Red Bank, USA
  • Volume
    23
  • Issue
    24
  • fYear
    1987
  • Firstpage
    1298
  • Lastpage
    1299
  • Abstract
    We report the growth and fabrication of the first InP/ GaInAs heterojunction bipolar transistor by OMCVD. Fabricated transistors exhibited near-ideal emitter-base junction electrical characteristics over ten orders of magnitude, enabling us to obtain transistor current gains as high as 5000 at current densities as low as 1000 A cm¿2. This is the highest current gain reported for this material system.
  • Keywords
    III-V semiconductors; bipolar transistors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; HET; III-V semiconductors; InP-GaInAs; OMCVD; chemical vapour deposition; emitter-base junction electrical characteristics; fabrication; heterojunction bipolar transistors; semiconductor growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870898
  • Filename
    4259139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038215