Title :
OMCVD-grown InP/GaInAs heterojunction bipolar transistors
Author :
Hayes, J.R. ; Bhat, R. ; Schumacher, H. ; Koza, M.
Author_Institution :
Bell Communications Research Inc., Red Bank, USA
Abstract :
We report the growth and fabrication of the first InP/ GaInAs heterojunction bipolar transistor by OMCVD. Fabricated transistors exhibited near-ideal emitter-base junction electrical characteristics over ten orders of magnitude, enabling us to obtain transistor current gains as high as 5000 at current densities as low as 1000 A cm¿2. This is the highest current gain reported for this material system.
Keywords :
III-V semiconductors; bipolar transistors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; HET; III-V semiconductors; InP-GaInAs; OMCVD; chemical vapour deposition; emitter-base junction electrical characteristics; fabrication; heterojunction bipolar transistors; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870898
