DocumentCode
1038224
Title
MOSFET model continuous from weak to strong inversion
Author
Abu-Zeid, M.M. ; de Jong, G.G.
Author_Institution
Eindhoven University of Technology, Eindhoven, Netherlands
Volume
23
Issue
24
fYear
1987
Firstpage
1299
Lastpage
1300
Abstract
A simple analytical model is proposed for long-channel MOSFETs. The model describes MOSFET operation in all regions from weak to strong inversion by a single exponential equation. This makes its implementation in CAD easy and time-saving. Predicted and experimental data are in good agreement.
Keywords
insulated gate field effect transistors; semiconductor device models; CAD; MOSFET model; exponential equation; long-channel MOSFETs; strong inversion;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870899
Filename
4259140
Link To Document