Title :
Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching
Author :
Abeles, J.H. ; Chan, W.K. ; Kastalsky, A. ; Harbison, J.P. ; Florez, L.T. ; Bhat, R.
Author_Institution :
Bell Communications Research, Red Bank, USA
Abstract :
The first optical modulators based on the free-carrier bleaching effect have been demonstrated. In these singlequantum-wen FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3 : 1 extinction ratio for a 10 V change in applied voltage to the gate electrode of a 750 ¿m FETOM waveguide.
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical modulation; optical saturable absorption; optical waveguides; 10 V; 750 micron; GaAs-AlGaAs; III-V semiconductors; SQW; free-carrier-induced bleaching; integrated optoelectronics; optical modulator; self aligned gate; single-quantum-well FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870901
