DocumentCode
1038242
Title
Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching
Author
Abeles, J.H. ; Chan, W.K. ; Kastalsky, A. ; Harbison, J.P. ; Florez, L.T. ; Bhat, R.
Author_Institution
Bell Communications Research, Red Bank, USA
Volume
23
Issue
24
fYear
1987
Firstpage
1302
Lastpage
1304
Abstract
The first optical modulators based on the free-carrier bleaching effect have been demonstrated. In these singlequantum-wen FET optical modulator (FETOM) devices, the FET gate is self-aligned to a waveguide. They exhibit a 3 : 1 extinction ratio for a 10 V change in applied voltage to the gate electrode of a 750 ¿m FETOM waveguide.
Keywords
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; optical modulation; optical saturable absorption; optical waveguides; 10 V; 750 micron; GaAs-AlGaAs; III-V semiconductors; SQW; free-carrier-induced bleaching; integrated optoelectronics; optical modulator; self aligned gate; single-quantum-well FET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870901
Filename
4259142
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