Title :
Selectively implanted buried oxide (SIBO) process for VLSI applications
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A novel process for achieving a thin (submicrometre-thick) monocrystalline silicon layer on an insulator (SOI) with a connection to the substrate at the edges of the insulator is presented. Results are obtained to prove the electrical connection of the SOI layer to the bulk silicon.
Keywords :
integrated circuit technology; ion implantation; semiconductor technology; SIBO; SOI; Si monocrystalline film; VLSI; edge connection to substrate; localised SOI; selectively implanted buried oxide; submicron film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870910
