• DocumentCode
    1038383
  • Title

    Characterization of avalanche diode TRAPATT oscillators

  • Author

    Evans, William J. ; Scharfetter, Donald L.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    17
  • Issue
    5
  • fYear
    1970
  • fDate
    5/1/1970 12:00:00 AM
  • Firstpage
    397
  • Lastpage
    404
  • Abstract
    The characteristics of a coaxial avalanche diode oscillator circuit are calculated and compared with experimental results. The circuit admittance, as seen at the diode terminals, is calculated in the frequency domain for "optimally tuned" experimental conditions. The impulse response function of the circuit, as obtained from the transformed admittance, is used to obtain time-evolution solutions of the avalanche diode circuit system. The impulse response is more general than the previously employed differential equation characterization of a lumped element equivalent circuit. The simulation presented of the high-efficiency mode of oscillation allowed no adjustable parameters and is in excellent agreement with experiment. The simulation verifies the original TRAPATT [1] explanation for the high-efficiency mode of oscillation.
  • Keywords
    Admittance; Circuit optimization; Circuit simulation; Coaxial components; Computer simulation; Differential equations; Diodes; Oscillators; Plasma measurements; Tuning;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.16995
  • Filename
    1476179