• DocumentCode
    1038448
  • Title

    Note on the interpretation of C-V data in semiconductor junctions

  • Author

    Coerver, L.E.

  • Volume
    17
  • Issue
    5
  • fYear
    1970
  • fDate
    5/1/1970 12:00:00 AM
  • Firstpage
    436
  • Lastpage
    436
  • Abstract
    This correspondence presents a proof that when Schottky barrier approximations are applicable to a p-n junction, a straight line on the graph of log C versus \\log (V+V_{B}) requires a power law dependence of doping on depletion width. This dependence is x^{(1/n-2)} .
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Doping profiles; Equations; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17002
  • Filename
    1476186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038448