DocumentCode :
1038448
Title :
Note on the interpretation of C-V data in semiconductor junctions
Author :
Coerver, L.E.
Volume :
17
Issue :
5
fYear :
1970
fDate :
5/1/1970 12:00:00 AM
Firstpage :
436
Lastpage :
436
Abstract :
This correspondence presents a proof that when Schottky barrier approximations are applicable to a p-n junction, a straight line on the graph of log C versus \\log (V+V_{B}) requires a power law dependence of doping on depletion width. This dependence is x^{(1/n-2)} .
Keywords :
Capacitance; Capacitance-voltage characteristics; Doping profiles; Equations; P-n junctions; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17002
Filename :
1476186
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1038448
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