Title :
Very low threshold current densities (under 100 A/cm2) in AlGaAs/GaAs single-quantum-well GRINSCH lasers grown by molecular beam epitaxy
Author :
Chen, H.Z. ; Ghaffari, Aboozar ; Morkoc, H. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Applied Physics Department, Pasadena, USA
Abstract :
Threshold current densities as low as 80 A/cm2 for 3.3 mm-long cavity lasers, and 93 A/cm2 for 520 ¿m-long cavity lasers have been obtained in AlGaAs/GaAs graded-index separate-confinement heterostructure (GRINSCH) single-quantum-well lasers with quantum-well widths between 65¿165 A grown by molecular beam epitaxy. The structures were prepared on (100) GaAs substrates and do not display the earlier reported dependence of lasing threshold characteristics on the quantum-well thickness in the range studied (65¿165 A).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor junction lasers; 3 mm; 520 micron; 65 to 165 A; AlGaAs-GaAs; GRINSCH; GaAs substrates; MBE; graded-index separate-confinement heterostructure; long cavity lasers; low threshold current densities; molecular beam epitaxy; quantum-well widths; single-quantum-well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870922
