DocumentCode
1038498
Title
AlGaAs/GaAs visible distributed feedback laser operating at 770 nm
Author
Nakano, Yoshiaki ; Luo, Yun ; Tada, Kazuki
Author_Institution
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Volume
23
Issue
25
fYear
1987
Firstpage
1342
Lastpage
1343
Abstract
A visible-light AlGaAs/GaAs DFB laser with practical characteristics oscillating at 770 nm has been fabricated by using two-step liquid phase epitaxy for the first time. Threshold current of 90 mA measured at room temperature is satisfactorily low for its simple oxide stripe structure. The same DFB mode oscillation without mode hopping has been maintained in a considerably wide range of temperature. The results show a possibility of realising a high-performance DFB laser in the visible-wavaelength region.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; liquid phase epitaxial growth; semiconductor junction lasers; 770 nm; 90 mA; AlGaAs-GaAs; DFB laser; LPE; distributed feedback laser; room temperature; simple oxide stripe structure; two-step liquid phase epitaxy; visible-light; visible-wavelength region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870927
Filename
4259169
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