Title :
Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors
Author :
Chan, W.K. ; Cox, H.M. ; Abeles, J.H. ; Kelty, S.P.
Author_Institution :
Bell Communications Research, Red Bank, USA
Abstract :
We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1¿m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.
Keywords :
III-V semiconductors; Langmuir-Blodgett films; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 19 GHz; HEMT; InP-GaInAs; Langmuir-Blodgett film deposition; MODFET; cadmium distearate; cutoff frequency; extrinsic transconductance; gate electrode; high-barrier-height Schottky barrier; modulation-doped field-effect transistors; n-Ga0.47In0.53As; plasma etching; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870930
