• DocumentCode
    1038552
  • Title

    Drift velocity saturation in MOS transistors

  • Author

    Baum, G. ; Beneking, H.

  • Volume
    17
  • Issue
    6
  • fYear
    1970
  • fDate
    6/1/1970 12:00:00 AM
  • Firstpage
    481
  • Lastpage
    482
  • Abstract
    It is shown that the drift velocity saturation of the current carriers in the channel of a MOSFET iS an important factor in the analysis of the electrical behavior of such devices. The theory presented here, which includes this effect, shows improved agreement with measured output characteristics.
  • Keywords
    Capacitance; Dielectric substrates; Doping; Electrodes; Electron mobility; MOSFET circuits; Neodymium; Poisson equations; Threshold voltage; Virtual colonoscopy;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17014
  • Filename
    1476198
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038552