Title :
MOVPE studies for the development of GaInAsP/InP lasers with semi-insulating InP blocking layers
Author :
Speier, P. ; Wunstel, K. ; Tegude, F.J.
Author_Institution :
SEL, Research Centre, Optoelectronic Components Division, Stuttgart, West Germany
Abstract :
The self-aligned selective regrowth of a GalnAsP/lnP BH laser with semi-insulating InP:Fe by atmospheric-pressure MOVPE is reported. A threshold current of 26 mA and 12mW output power at 100mA are obtained. Very low capacitance values of 3¿5 pF are measured, promising excellent high-frequency performance.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; semiconductor technology; vapour phase epitaxial growth; 12 mW; 26 mA; 3 to 5 pF; BH laser; GaInAs-InP lasers; InP:Fe; atmospheric-pressure MOVPE; capacitance; output power; self-aligned selective regrowth; semi-insulating InP blocking layers; semi-insulating InP:Fe; semiconductors; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870941
