DocumentCode
1038689
Title
Large ac signal behavior of the MOS capacitor biased in inversion
Author
Pierret, R.F. ; Ho, C.T.
Volume
17
Issue
7
fYear
1970
fDate
7/1/1970 12:00:00 AM
Firstpage
561
Lastpage
562
Abstract
The behavior of inversion-biased MOS capacitors as function of the ac signal magnitude is examined and explained. A method based on the theory developed is proposed for estimating bulk doping concentrations.
Keywords
Capacitance measurement; Doping; Electron beams; Laboratories; MOS capacitors; Magnetic analysis; Physics; Relativistic effects; Size measurement; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1970.17029
Filename
1476213
Link To Document