Title :
Large ac signal behavior of the MOS capacitor biased in inversion
Author :
Pierret, R.F. ; Ho, C.T.
fDate :
7/1/1970 12:00:00 AM
Abstract :
The behavior of inversion-biased MOS capacitors as function of the ac signal magnitude is examined and explained. A method based on the theory developed is proposed for estimating bulk doping concentrations.
Keywords :
Capacitance measurement; Doping; Electron beams; Laboratories; MOS capacitors; Magnetic analysis; Physics; Relativistic effects; Size measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17029
