• DocumentCode
    1038689
  • Title

    Large ac signal behavior of the MOS capacitor biased in inversion

  • Author

    Pierret, R.F. ; Ho, C.T.

  • Volume
    17
  • Issue
    7
  • fYear
    1970
  • fDate
    7/1/1970 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    562
  • Abstract
    The behavior of inversion-biased MOS capacitors as function of the ac signal magnitude is examined and explained. A method based on the theory developed is proposed for estimating bulk doping concentrations.
  • Keywords
    Capacitance measurement; Doping; Electron beams; Laboratories; MOS capacitors; Magnetic analysis; Physics; Relativistic effects; Size measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17029
  • Filename
    1476213