Title :
Negative differential resistance produced by Joule heating in semiconductors
fDate :
7/1/1970 12:00:00 AM
Abstract :
A simple analysis indicates that negative differential resistance (NDR) characteristics may be made possible by an intervalley electron-transfer process enhanced by Joule heating in semiconductors at low fields. The negative temperature coefficient of electronic mobility of semiconductors is also favorable to the achievement of NDR.
Keywords :
Capacitance; Conductors; Current measurement; Doping; Electrons; Frequency measurement; MOS capacitors; Resistance heating; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17030
