DocumentCode :
1038726
Title :
Small-signal high-frequency response of the insulated-gate field-effect transistor
Author :
Cherry, E.M.
Author_Institution :
Monash University, Clayton, Victoria, Australia
Volume :
17
Issue :
8
fYear :
1970
fDate :
8/1/1970 12:00:00 AM
Firstpage :
569
Lastpage :
577
Abstract :
A complete solution is presented for the small-signal high-frequency response of an idealized model of the insulated-gate field-effect transistor. The 
parameters are found by solving Bessel\´s equation and are plotted as functions of signal frequency and the quiescent conditions. In addition to these general results, simple approximate results that apply only beyond the point of pinch-off are derived for operation at moderately low frequencies.
parameters are found by solving Bessel\´s equation and are plotted as functions of signal frequency and the quiescent conditions. In addition to these general results, simple approximate results that apply only beyond the point of pinch-off are derived for operation at moderately low frequencies.Keywords :
Differential equations; Electrical capacitance tomography; Electrical resistance measurement; Electron tubes; Equivalent circuits; FETs; Frequency; Helium; Insulation; Vacuum technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17033
Filename :
1476217
Link To Document :
