DocumentCode :
1038760
Title :
Numerical solutions for a one-dimensional silicon n-p-n transistor
Author :
Gokhale, B.V.
Author_Institution :
IBM Components Division, Hopewell Junction, N.Y.
Volume :
17
Issue :
8
fYear :
1970
fDate :
8/1/1970 12:00:00 AM
Firstpage :
594
Lastpage :
602
Abstract :
This paper describes a technique of obtaining numerical solutions of the basic carrier transport equations for a semiconductor and the results of some calculations pertaining to a silicon n-p-n transistor. The calculations include dc characteristics in direct and inverse operation, saturation parameters, and small-signal ac common emitter h -parameters. Both Boltzmann and Fermi statistics have been used, and the dependence of carrier mobilities on electric field has been taken into account.
Keywords :
Charge carrier density; Charge carrier processes; Electric fields; Impurities; Poisson equations; Radiative recombination; Semiconductor devices; Silicon; Statistical analysis; Transistors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17036
Filename :
1476220
Link To Document :
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