DocumentCode
1038818
Title
Comparison of phase modulation of GaAs/AlGaAs double heterostructures
Author
Faist, J. ; Reinhart, F.K. ; Martin, Daniel
Author_Institution
Ecole Polytechnique Federate de Lausanne, Institut de Micro et T Opto-electronique, Lausanne, Switzerland
Volume
23
Issue
25
fYear
1987
Firstpage
1391
Lastpage
1392
Abstract
The performance of double-heterostructure GaAs/AlxGa1¿xs phase modulators with different doping profiles are systematically compared. The largest phase modulation of l.75rad/V mm at a wavelength of 1.09¿m was obtained with an active layer doped at n=3 × 1017cm¿3. However, an intrinsic active layer gives the lowest characteristic modulation energy needed for high-frequency modulation.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; optical modulation; optical waveguide components; phase modulation; 1.09 micron; GaAs-AlxGa1-xAs; III-V semiconductors; doping profiles; double heterostructures; high-frequency modulation; integrated optoelectronics; intrinsic active layer; phase modulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19870960
Filename
4259202
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