Title :
Silicon contact for area reduction of integrated circuits
Author :
Lin, H.C. ; Alexander, D.S.
Author_Institution :
University of Maryland, College Park, Md.
fDate :
8/1/1970 12:00:00 AM
Abstract :
The area of integrated circuits can be reduced by not allowing any space between the contact and the junction edge. Epitaxially grown silicon contacts have been used to achieve this goal.
Keywords :
Aluminum; Circuits; Conductivity; Contact resistance; Electron devices; MOSFETs; NASA; Schottky barriers; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17043
