• DocumentCode
    1038909
  • Title

    Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp

  • Author

    Kao, Y.C. ; Davis, J.R.

  • Volume
    17
  • Issue
    9
  • fYear
    1970
  • fDate
    9/1/1970 12:00:00 AM
  • Firstpage
    652
  • Lastpage
    657
  • Abstract
    When a p-n junction is switched from the forward to the reverse direction by a current ramp, the reverse recovery time trris found 1) either to be equal to the base lifetime τ if the ramp rate R \\ll I_{F} / \\tau , 2) to be equal to 0.79τ if R \\approx I_{F} / \\tau , or 3) to be equal to 0.7 τ if R \\gg I_{F} / \\tau . These results afford correlations between τrrand τ and also provide the basis for a useful method for measuring τ.
  • Keywords
    Charge carrier processes; Current density; Gaussian processes; Helium; Integral equations; P-n junctions; Rectifiers; Region 7; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17052
  • Filename
    1476236
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1038909