Title :
The design of high-voltage high-power silicon junction rectifiers
Author_Institution :
Westinghouse Research Laboratory, Pittsburgh, Pa.
fDate :
9/1/1970 12:00:00 AM
Abstract :
A set of curves is presented. These curves can be easily used to obtain the tradeoff relations between the reverse and the forward voltages of high-voltage p-i-n rectifiers. By using the lifetime as a parameter, those curves can also be used to achieve compromises between the forward voltage and the recovery time.
Keywords :
Charge carrier processes; Equations; P-n junctions; PIN photodiodes; Rectifiers; Scattering; Semiconductor impurities; Silicon; TV; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17053
