A high-voltage, high-temperature reverse conducting thyristor

This paper describes the structure and electrical characteristics of a silicon p-n-p-n inverter switch which has been fabricated to demonstrate the feasibility of obtaining both high-voltage and high-temperature capability in the same device while still maintaining reasonable dynamic properties. It was realized that in most inverter systems, feedback rectifiers are required, and thus the reverse blocking capability of a thyristor is not utilized. This was used to advantage in the design of a thyristor by integrating an anti-parallel rectifier into a conventional thyristor structure. Although this approach results in a thyristor having a negligible reverse blocking capability in comparison to commercially available power thyrisitors, the potential advantages of lower conduction losses, high maximum junction temperatures, and integrated antiparallel rectifier may be attractive for use in inverters. Reverse conducting thyristors designed in this fashion have been operated with reasonable turnoff times at a forward blocking voltage of 1000 volts while at case temperatures of up to 230°C.