Title :
Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures
Author :
Razeghi, M. ; Tardella, A. ; Davies, R.A. ; Long, A.P. ; Kelly, Michael J. ; Britton, E. ; Boothroyd, C. ; Stobbs, W.M.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
We report the first observation of room-temperature negative differential resistance in the GaInAs/InP materials system. The double-barrier structure examined was grown by organometallic chemical vapour deposition.
Keywords :
CVD coatings; III-V semiconductors; gallium arsenide; indium compounds; negative resistance effects; p-n heterojunctions; tunnelling; double-barrier structure; organometallic chemical vapour deposition; resonant tunnelling; room-temperature negative differential resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870082
