DocumentCode :
1038970
Title :
Geometry of thyristor cathode shunts
Author :
Chu, Chang K.
Author_Institution :
Westinghouse Electric Corporation, Youngwood, Pa.
Volume :
17
Issue :
9
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
687
Lastpage :
690
Abstract :
In the all-diffused thyristor, the shunt pattern can easily be introduced by photo masking or silk screen techniques. It is known that the emitter shunts of various designs affected the rate of rise of forward blocking voltage, the forward I-V characteristics, the loop effect, the turn-on time, the dynamic forward voltage drop, and the reverse recovery time. This paper will show their relations to several shunt patterns based on experimental results.
Keywords :
Aluminum; Cathodes; Etching; Geometry; Helium; Hysteresis; Silicon; Testing; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17058
Filename :
1476242
Link To Document :
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