Title :
Geometry of thyristor cathode shunts
Author_Institution :
Westinghouse Electric Corporation, Youngwood, Pa.
fDate :
9/1/1970 12:00:00 AM
Abstract :
In the all-diffused thyristor, the shunt pattern can easily be introduced by photo masking or silk screen techniques. It is known that the emitter shunts of various designs affected the rate of rise of forward blocking voltage, the forward I-V characteristics, the loop effect, the turn-on time, the dynamic forward voltage drop, and the reverse recovery time. This paper will show their relations to several shunt patterns based on experimental results.
Keywords :
Aluminum; Cathodes; Etching; Geometry; Helium; Hysteresis; Silicon; Testing; Thyristors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17058