DocumentCode :
1038996
Title :
High power gate-controlled switch
Author :
New, T.C. ; Frobenius, Wolf D. ; Desmond, T.J. ; Hamilton, D.R.
Author_Institution :
Motorola Semiconductor Products Division, Phoenix, Ariz.
Volume :
17
Issue :
9
fYear :
1970
fDate :
9/1/1970 12:00:00 AM
Firstpage :
706
Lastpage :
710
Abstract :
The ratings of GCS´s have remained around 10 amperes and 600 volts since the early 1960´s. The problem of increasing the device´s capability is therefore reviewed. Experimental results show that turn-off is governed by the diversion of the anode current through the gate,the sequence of junction recovery, the optimum gate drive timing, and the condition of a low impedance drive voltage below the gate avalanche point. Furthermore, the scaling-up for high current assumes that the total current is shared by each elemental area at all times, Tests revealed that nonuiformity leads to shifting of load current during turn-off into on area which causes failure. With due consideration of these factors, a practical design and process for the high power GCS were developed. Data on developmental 50-ampere GCS´s are presented.
Keywords :
Anodes; Cathodes; Impedance; Low voltage; Power transistors; Process design; Switches; Switching circuits; Testing; Timing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17061
Filename :
1476245
Link To Document :
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