• DocumentCode
    1039151
  • Title

    SiO2/Si3N4passivation of high-power rectifiers

  • Author

    Verderber, Rudolph R. ; Gruber, Gilbert A. ; Ostroski, John W. ; Johnson, Joseph E. ; Tarneja, Krishan S. ; Gillott, David M. ; Coverston, Boyd J.

  • Author_Institution
    Westinghouse Research Laboratories, Pittsburgh, Pa.
  • Volume
    17
  • Issue
    9
  • fYear
    1970
  • fDate
    9/1/1970 12:00:00 AM
  • Firstpage
    797
  • Lastpage
    799
  • Abstract
    High-power mesa-type rectifiers were passivated with successive layers of SiO2and Si3N4by a low-temperature chemical vapor deposition technique. Reverse I-V characteristics, high-temperature yield, ancl blocking life test results are compared with values obtained with a polyimide coating. The high-temperature performance of the oxide-nitride passivated unit is found to be superior to the polyimide coated units. A strong correlation between the high-temperature leakage current and thermal stability of the device is noted.
  • Keywords
    Chemical vapor deposition; Coatings; Electric variables; Organic materials; Passivation; Polyimides; Protection; Rectifiers; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17076
  • Filename
    1476260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039151