On the influence of hot carrier effects on the thermal noise of field-effect transistors

The noise resistance of the field-effect transistor has been calculated taking into account high-field effects such as mobility saturation and hot carrier temperature upon the thermal noise. The result of the calculations can be represented by a practical formula. The calculated results have been compared with measurements of the noise of a junction gate FET and a MOS tetrode with short active channels. The agreement is reasonable. At room temperature the effect is moderate, but at low temperatures it is considerable.