• DocumentCode
    1039470
  • Title

    Proposal and demonstration of multi-emitter HBTs

  • Author

    Imamura, Kousuke ; Takatsu, Masaru ; Mori, Takayoshi ; Bamba, Y. ; Muto, Salvatore ; Yokoyama, Naoki

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi
  • Volume
    30
  • Issue
    5
  • fYear
    1994
  • fDate
    3/3/1994 12:00:00 AM
  • Firstpage
    459
  • Lastpage
    460
  • Abstract
    The authors have designed and tested InGaAs-InAlGaAs multi-emitter HBTs (ME-HBTs). The emitter electrodes of the transistor work as both an emitter and a base depending on their potential. A highly doped emitter layer was used for a low turn-on voltage for the collector current. Using an ME-HBT, the room-temperature operation of AND/NOR gates was tested
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; logic gates; AND/NOR gates; InGaAs-InAlGaAs; base; collector current; emitter electrodes; highly doped emitter layer; low turn-on voltage; multi-emitter HBT; potential; room-temperature operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940263
  • Filename
    273232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039470