Title :
New pin MOSFET structure for hot carrier suppression
Author :
Manna, I. ; Jung, L. ; Bhattacharya, Surya ; Banerjee, Sean
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
fDate :
3/3/1994 12:00:00 AM
Abstract :
As an alternative to lightly doped drain (LDD) structures, a new pin MOSFET structure has been developed with near-intrinsic doping in the channel near the source/drain ends. This new structure has better hot carrier suppression, current drive capability and short channel effects compared to LDD MOSFETs
Keywords :
doping profiles; hot carriers; insulated gate field effect transistors; current drive capability; hot carrier suppression; near-intrinsic doping; pin MOSFET structure; short channel effects; source/drain ends;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940275
