Millimetre-wave InP/InGaAs heterojunction bipolar transistors with a subpicosecond extrinsic delay time

Author

Song, Jong-In ; Hong, Woo-Pyo ; Palmstrom, C.J.

Author_Institution

Bellcore, Red Bank, NJ

Volume

30

Issue

5

fYear

1994

fDate

3/3/1994 12:00:00 AM

Firstpage

456

Lastpage

457

Abstract

We report the microwave characteristics of InP/InGaAs heterojunction bipolar transistors (HBTs) using a carbon-doped base grown by chemical beam epitaxy (CBE). An extrinsic delay time of 0.856 ps was achieved by nonequilibrium transport in a very thin base layer and extremely small emitter parasitic resistance through the use of silicon δ-doping in the emitter ohmic contact layer. To our knowledge, this is the shortest extrinsic delay time of any bipolar transistors reported. This result indicates the great potential of InP/InGaAs HBTs for applications requiring a very large bandwidth

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 0.856 ps; InP-InGaAs; InP-InGaAs:C,Si; InP/InGaAs HBT; Millimetre-wave InP/InGaAs heterojunction bipolar transistors; carbon-doped base; chemical beam epitaxy; emitter ohmic contact layer; extremely small emitter parasitic resistance; extrinsic delay time; microwave characteristics; nonequilibrium transport; silicon δ-doping; subpicosecond extrinsic delay time; very large bandwidth;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940293

Filename

273234