Title :
A Sub-1-V, 10 ppm/ °C, Nanopower Voltage Reference Generator
Author :
De Vita, Giuseppe ; Iannaccone, Giuseppe
Author_Institution :
Univ. di Pisa, Pisa
fDate :
7/1/2007 12:00:00 AM
Abstract :
An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35-mum CMOS process. The maximum supply current measured at the maximum supply voltage and at 80degC is 70 nA. A temperature coefficient of 10 ppm/degC is achieved as the combined effect of 1) a perfect suppression of the temperature dependence of mobility; 2) the compensation of the channel length modulation effect on the temperature coefficient; and 3) the absence of the body effect. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -53 and -42 dB, respectively. The occupied chip area is 0.045 mm2.
Keywords :
CMOS integrated circuits; compensation; low-power electronics; nanoelectronics; reference circuits; AMS CMOS process; channel length modulation effect; current 70 nA; nanopower voltage reference generator; power supply rejection ratio; temperature 80 C; temperature coefficient; temperature compensation; voltage 0.9 V to 4 V; CMOS process; CMOS technology; Circuits; DC generators; Low voltage; MOSFETs; Photonic band gap; Power generation; Temperature dependence; Threshold voltage; CMOS voltage reference; low power; temperature compensation;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.899077
