Title :
Vertical integration of a GaAs/AlGaAs quantum-well laser and a long-wavelength quantum-well infra-red photodetector
Author :
Tsang, J.S. ; Lee, Charlotte P. ; Tsai, K.L. ; Chen, H.R.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
3/3/1994 12:00:00 AM
Abstract :
A short-wavelength (~0.8 μm) GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser has been monolithically integrated with a long-wavelength (~8 μm) GaAs/AlGaAs multiple-quantum-well infra-red photodetector on a semi-insulating GaAs substrate by molecular beam epitaxy. The vertical integration method is used and the combined structure is a pinin structure. Both the laser and detector exhibit excellent characteristics. At room temperature, the ridge waveguide laser has an extremely low threshold current of 25 mA and a differential quantum efficiency above 65% with a stripe width of 20 μm. The quantum-well detector has a peak response at 8 μm and a responsivity of 0.7 A/W
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; integrated optoelectronics; photodetectors; semiconductor lasers; semiconductor quantum wells; 0.8 micron; 20 micron; 25 mA; 65 percent; 8 micron; GaAs; GaAs-AlGaAs; GaAs/AlGaAs multiple-quantum-well infra-red photodetector; GaAs/AlGaAs quantum-well laser; differential quantum efficiency; extremely low threshold current; long-wavelength quantum-well infra-red photodetector; molecular beam epitaxy; monolithic integration; peak response; pinin structure; responsivity; ridge waveguide laser; room temperature; semi-insulating GaAs substrate; short-wavelength GaAs/AlGaAs graded-index separate-confinement heterostructure quantum-well laser; stripe width; vertical integration; vertical integration method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940295
