• DocumentCode
    1039533
  • Title

    Dielectric relaxation in Si—SiO2—Cr structures

  • Author

    Kriegler, R.J. ; Bartnikas, Ray

  • Volume
    17
  • Issue
    11
  • fYear
    1970
  • fDate
    11/1/1970 12:00:00 AM
  • Firstpage
    1010
  • Lastpage
    1011
  • Abstract
    The dielectric behavior of thermally grown SiO2was examined using Si-SiO2-Cr structures. The relaxation spectrum exhibits a time dependence indicative of diminishing charge-carrier concentration. The relaxation process is characterized by activation energies of 29-32 kcal/mole; this, together with the considerably higher loss measured in specimens contaminated with Na2CO3, suggests sodium as the carrier source.
  • Keywords
    Chromium; Contacts; Counting circuits; Dielectric loss measurement; Dielectric measurements; Electrodes; Frequency; Loss measurement; Pollution measurement; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1970.17115
  • Filename
    1476299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1039533