An EMI Resisting LIN Driver in 0.35-micron High-Voltage CMOS

This paper describes the design of a local interconnect network (LIN) integrated output driver circuit exhibiting a high degree of immunity against conducted electromagnetic interference (EMI). The transmitted signal of this driver is shaped with a predefined slope so as to reduce electromagnetic emission at higher frequencies. The effect of EMI coupling from the data bus into the driver circuit is countered using a new feedback scheme which shields the slope shaping function from the output stage. Although the output signal may be heavily corrupted by EMI, the LIN driver continues to deliver an unaltered duty cycle, which is mandatory to obtain an error-free data transmission. Measurements show that this driver circuit manages to withstand the highest levels of the direct power injection (DPI) measurements independently of the injected EMI level.