Title :
Wideband HEMT MMIC low-noise amplifier with temperature compensation
Author :
Long, A.P. ; Holmes, S.J. ; Wallis, R.H.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester
fDate :
3/3/1994 12:00:00 AM
Abstract :
A wideband low-noise pseudomorphic HEMT MMIC variable-gain amplifier has been designed and fabricated. The amplifier has a nominal gain of 13 dB across the band 2-20 GHz, with gain flatness better than ±0.4 dB. The noise figure is less than 3 dB across the band 6-16 GHz. An on-chip temperature-sensing diode is used to provide a linear temperature correction which has been used to reduce the gain variation of the amplifier by a factor of 2 across the temperature range -50°C to +95°C
Keywords :
MMIC; compensation; field effect integrated circuits; gain control; high electron mobility transistors; microwave amplifiers; wideband amplifiers; -50 to 95 C; 13 dB; 2 to 20 GHz; 3 dB; HEMT MMIC; SHF; linear temperature correction; low-noise amplifier; onchip temperature-sensing diode; pseudomorphic HEMT; temperature compensation; variable-gain amplifier; wideband LNA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940297
