Title :
Differential drain resistance of field-effect transistors beyond pinch-off: A comparison between theory and experiment
fDate :
12/1/1970 12:00:00 AM
Abstract :
The theoretical computation of the drain characteristics of junction field-effect transistors reported by Kim and Yang has been compared with the experimental measurements in terms of the differential drain resistance. Good agreement between the theory and experiment has been found.
Keywords :
Capacitance measurement; Electrical resistance measurement; Electron mobility; Electrostatics; FETs; Poisson equations; Resistors; Steady-state; Testing; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1970.17132
