DocumentCode :
1039690
Title :
Differential drain resistance of field-effect transistors beyond pinch-off: A comparison between theory and experiment
Author :
Choong-Ki Kim
Volume :
17
Issue :
12
fYear :
1970
fDate :
12/1/1970 12:00:00 AM
Firstpage :
1088
Lastpage :
1089
Abstract :
The theoretical computation of the drain characteristics of junction field-effect transistors reported by Kim and Yang has been compared with the experimental measurements in terms of the differential drain resistance. Good agreement between the theory and experiment has been found.
Keywords :
Capacitance measurement; Electrical resistance measurement; Electron mobility; Electrostatics; FETs; Poisson equations; Resistors; Steady-state; Testing; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1970.17132
Filename :
1476316
Link To Document :
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