Title :
Low RC-Constant Perforated-Channel HFET
Author :
Simin, Grigory S. ; Islam, Mohammad ; Gaevski, M. ; Deng, Jiansong ; Gaska, R. ; Shur, Michael S.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing. These results are especially important for new generations of power switching transistors.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power semiconductor switches; wide band gap semiconductors; AlGaN-GaN; HFET design; current spreading effect; drain parasitic resistance; gate-drain region; perforated channel region; power switching transistors; source parasitic resistance; source-gate region; Aluminum gallium nitride; Capacitance; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN; HEMT; HFET; power switch;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2304726
