• DocumentCode
    103975
  • Title

    Low RC-Constant Perforated-Channel HFET

  • Author

    Simin, Grigory S. ; Islam, Mohammad ; Gaevski, M. ; Deng, Jiansong ; Gaska, R. ; Shur, Michael S.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
  • Volume
    35
  • Issue
    4
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    449
  • Lastpage
    451
  • Abstract
    The novel HFET design using perforated channel region under the gate reduces drain and source parasitic resistances due to the current spreading effect in the source-gate and gate-drain regions. Demonstrated results for AlGaN/GaN HFET show that the RONCG time constant reduces around two times using simple and robust perforated channel device processing. These results are especially important for new generations of power switching transistors.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; power semiconductor switches; wide band gap semiconductors; AlGaN-GaN; HFET design; current spreading effect; drain parasitic resistance; gate-drain region; perforated channel region; power switching transistors; source parasitic resistance; source-gate region; Aluminum gallium nitride; Capacitance; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaN/GaN; HEMT; HFET; power switch;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2014.2304726
  • Filename
    6740828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=103975