Si3N4-masked thermally oxidized post-diffused mesa process (SIMTOP)

This paper describes a new process for the fabricating of semiconductor devices, using a silicon nitride (Si3N4-masked thermally oxidized post-diffused mesa process (SIMTOP), which combines the advantages of both the mesa and planar processes while eliminating the disadvantages peculiar to each. An IMPATT diode was fabricated as a model vehicle for the process and the physical and electrical data are presented. A comparison is made of voltage breakdown on rectifier devices made by the mesa, planar, and SIMTOP process. Other applications of this new process are discussed and scanning electron microphotographs of the IMPATT structure are included.