DocumentCode :
1039844
Title :
Generation and the characteristics of current pulses from alloyed-type low-conductivity bulk GaAs
Author :
Hayashi, Teruaki ; Takao, I.
Volume :
18
Issue :
1
fYear :
1971
fDate :
1/1/1971 12:00:00 AM
Firstpage :
70
Lastpage :
72
Abstract :
Current pulses with frequencies in the vicinity of 1 kHz were observed in low-conductivity copper-doped GaAs. The coherent current pulses were obtained by applying an ac half-sinusoid voltage to low-conductivity bulk GaAs samples with indium ohmic contacts. The repetition rate increased as the applied voltage was increased. Illumination of the specimen surface or change in ambient temperature had a strong effect on the current pulses. The current pulses are due to ionization of deep levels and are compared to the microplasma pulses observed in Si and Ge p-n junctions.
Keywords :
Character generation; Frequency; Gallium arsenide; Indium; Ionization; Lighting; Ohmic contacts; Pulse generation; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1971.17147
Filename :
1476469
Link To Document :
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