Title :
Novel 10Gbit/s integrated silicon bipolar decision circuit for dispersion supported transmission
Author_Institution :
Res. Centre, Alcatel SEL, Stuttgart
fDate :
3/3/1994 12:00:00 AM
Abstract :
A special decision circuit with dual threshold detection and memory has been realised for 10 Gbit/s operation as an integrated circuit using a silicon bipolar technology. The circuit can be used for signal regeneration in conjunction with the method of dispersion supported transmission
Keywords :
bipolar integrated circuits; elemental semiconductors; integrated optoelectronics; optical communication equipment; silicon; 10 Gbit/s; 10 Gbit/s operation; Si; bipolar decision circuit; dispersion supported transmission; dual threshold detection; integrated optoelectronics; optical transmission; signal regeneration; silicon bipolar technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940257
