Title :
Thermal breakdown delay time in silicon p-n junctions
Author :
Fleming, Daniel J.
Author_Institution :
Syracuse University, Syracuse, N. Y.
fDate :
2/1/1971 12:00:00 AM
Abstract :
The geometric effects on the applied power dependence of the delay time preceding thermal breakdown in p-n junctions are predicted in terms of a linear heat-flow model and temperature-dependent reverse current. Measurements of the delay time on silicon planar p-n junctions of various areas are compared to the predictions and found to be in reasonable accord.
Keywords :
Breakdown voltage; Current density; Delay effects; Electric breakdown; Helium; P-n junctions; Silicon; Slabs; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17155
