Title :
Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies
Author :
Baechtold, Werner
Author_Institution :
IBM Zürich Research Laboratory, Rüschlikon, Switzerland
fDate :
2/1/1971 12:00:00 AM
Abstract :
The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz.
Keywords :
1f noise; Acoustical engineering; Circuit noise; Equivalent circuits; FETs; Low-frequency noise; MESFETs; Microwave frequencies; Microwave transistors; Schottky barriers;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17156
