High-Voltage LDMOS Transistor With Split-Gate Structure for Improved Electrical Performance

Author

Kee-Yeol Na ; Ki-Ju Baek ; Gun-Woong Lee ; Yeong-Seuk Kim

Author_Institution

Chungbuk Provincial Coll., Ok-Cheon Goon, South Korea

Volume

60

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

3515

Lastpage

3520

Abstract

An n-channel split-gate laterally double-diffused metal-oxide-semiconductor (LDMOS) device is presented. The proposed split-gate LDMOS has a primary gate (PG) and floating gate (FG). The FG is formed by spacer etching and placed along the perimeter of the PG. The potential of the FG is determined by the potential of the PG and the capacitive coupling ratio. Therefore, the FG has lower potential than that of the PG. This potential difference along the channel length direction accelerates channel carriers, which ultimately enhances device performances. From device measurements, the fabricated splitgate LDMOS devices showed improved electrical characteristics: lower drain-induced barrier lowering; higher transconductance (g_m); lower drain conductance (g_ds = 1/_rout); lower ON-resistances R_ON; and higher early voltage V_EA = I_D/g_ds.

Keywords

MOSFET; coupled circuits; etching; semiconductor device measurement; FG; PG; capacitive coupling ratio; channel carrier acceleration; channel length direction acceleration; floating gate; high-voltage LDMOS transistor; improved electrical performance; lower drain-induced barrier lowering; n-channel split-gate laterally double-diffused metal-oxide-semiconductor device; primary gate; spacer etching; split-gate LDMOS structure; Current measurement; Electric potential; Junctions; Logic gates; Performance evaluation; Split gate flash memory cells; Voltage measurement; Capacitive coupling ratio $(alpha)$; channel length modulation (CLM); drain conductance $(g_{{rm ds}})$; drain-induced barrier lowering (DIBL); early voltage $(V_{{rm E}A})$; high-voltage (HV) device; laterally double-diffused metal-oxide-semiconductor (LDMOS); split-gate transistor; transconductance $(g_{m})$;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2278974

Filename

6587782