Title :
Lumped modeling of optical generation in nonuniformly doped semiconductors
Author :
Brugler, J. Stephen
Author_Institution :
Stanford University, Stanford, Calif.
fDate :
3/1/1971 12:00:00 AM
Abstract :
When carrier density is normalized and recombination neglected, a single transport element accounts for both drift and diffusion. Optical generation is modeled by discrete current sources, and expressions for lumped elements are obtained in terms of integrals of the doping profile. Good physical intuition with respect to the effect of the profile on photocurrent transport is obtained, and analytical calculation of device quantum efficiency is facilitated.
Keywords :
Charge carrier density; Doping profiles; Equations; Photoconductivity; Phototransistors; Radiative recombination; Semiconductor device doping; Semiconductor devices; Semiconductor impurities; Semiconductor process modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17173
