Title :
A resistive-gated IGFET tetrode
Author :
Hu, Chenming ; Muller, Richard S.
Author_Institution :
University of California, Berkeley, Calif.
fDate :
7/1/1971 12:00:00 AM
Abstract :
Studies of the properties of a new insulated-gate field-effect tetrode which consists basically of an IGFET triode having a resistive-gate electrode with connections transverse to the source-drain dimension are described. Experimental tetrodes on silicon with nichrome gates are fabricated to demonstrate applications of the device as a mixer, an amplitude modulator, and an AGC amplifier. Theories are also developed to calculate the static and the high-frequency characteristics of the tetrode, and are found to be in good agreement with the experimental results.
Keywords :
Amplitude modulation; Circuits; Cutoff frequency; Electrodes; Fabrication; Insulation; Power generation economics; Production; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1971.17218
